draining depth中文是什么意思

• 排水深度

• "drain"中文翻译    vt. 1.排去(水等液体)，排泄，放干 (away; ...
• "depth"中文翻译    n. 1.深；深度。 2.(色泽的)浓度；(声音的)低沉 ...
• "depth of draining" 中文翻译 :    排沟深度
• "draining" 中文翻译 :    滴干; 敷设排水渠道; 果汁的漏滴; 沥干; 滤水; 排水作业排泄; 倾浆; 疏干
• "adit for draining" 中文翻译 :    排水坑道
• "condensate draining" 中文翻译 :    冷凝水槽
• "double draining" 中文翻译 :    再排浆(搪瓷)
• "draining abscess" 中文翻译 :    引流的脓肿
• "draining adit" 中文翻译 :    排水平洞
• "draining area" 中文翻译 :    排水面积; 排泄口面积; 排泄面
• "draining bed" 中文翻译 :    排水垫层
• "draining bilge" 中文翻译 :    疏水阱; 污水排泄
• "draining blanket" 中文翻译 :    排水面层
• "draining board" 中文翻译 :    滴水板; 沥水板
• "draining box" 中文翻译 :    沥箱
• "draining characteristics" 中文翻译 :    排水特性
• "draining cock" 中文翻译 :    放泄旋塞泄水旋塞; 泄水旋塞
• "draining device" 中文翻译 :    榨汁装置
• "draining dish" 中文翻译 :    漏滴皿
• "draining effect" 中文翻译 :    穿流效应
• "draining froth" 中文翻译 :    干泡
• "draining funnel" 中文翻译 :    放液漏斗; 排水漏斗; 泄液漏斗
• "draining hopper" 中文翻译 :    排水漏斗
• "draining hose" 中文翻译 :    排液管
• "draining kit" 中文翻译 :    排水工具

• Based on the hydrodynamic energy transport model , the influence of variation of negative junction depth caused by concave depth on the characteristics of deep - sub - micron pmosfet has been studied . the results are explained by the interior physical mechanism and compared with that caused by the source / drain depth . research results indicate that with the increase of negative junction depth ( due to the increase of groove depth ) , the threshold voltage increases , the sub - threshold characteristics and the drain current driving capability degrade , and the hot carrier immunity becomes better in deep - sub - micron pmosfet . the short - channel - effect suppression and hot - carrier - effect immunity are better , while the degradation of drain current driving ability is smaller than those with the increase of depth of negative junction caused by source / drain junction shallow . so the variation of concave depth is of great advantage to improve the characteristics of grooved - gate mosfet
  基于能量输运模型对由凹槽深度改变引起的负结深的变化对深亚微米槽栅pmosfet性能的影响进行了分析，对所得结果从器件内部物理机制上进行了讨论，最后与由漏源结深变化导致的负结深的改变对器件特性的影响进行了对比.研究结果表明随着负结深(凹槽深度)的增大，槽栅器件的阈值电压升高，亚阈斜率退化，漏极驱动能力减弱，器件短沟道效应的抑制更为有效，抗热载流子性能的提高较大，且器件的漏极驱动能力的退化要比改变结深小.因此，改变槽深加大负结深更有利于器件性能的提高